Innovation in memory technology is constant. In this article, TechInsights’ Jeongdong Choe reviews the latest developments in DRAM, NAND, and emerging technology, and provide insight on the trends in this space.
Mott Memristor Chaos could make Efficient AI
Congratulations to Suhas Kumar, John Paul Strachan, and R. Stanley Williams of Hewlett Packard Labs in Palo Alto for showing not just how to make a Mott memristor, but that you can create controlled chaos with one. “We showed that…
3D XPoint uses PCM Material in ReRAM Device
IM Flash pre-announced “3D XPoint”(TM) memory for release later this year, and lack of details has led to widespread confusion regarding what it is. EETimes has reported that, “Chalcogenide material and an Ovonyx switch are magic parts of this technology…
Cross-point ReRAM Integration Claimed by Intel/Micron
The Intel/Micron joint-venture now claims to have successfully integrated a Resistive-RAM (ReRAM) made with an unannounced material in a cross-point architecture, switching using an undisclosed mechanism. Pilot production wafers are supposed to be moving through the Lehi fab, and samples…
Moore’s Law is Dead – (Part 3) Where?
…we reach the atomic limits of device scaling. At ~4nm pitch we run out of room “at the bottom,” after patterning costs explode at 45nm pitch. Lead bongo player of physics Richard Feynman famously said, “There’s plenty of room at…
