Amid COVID-19 and Trade War, China Continues to Advance Its Semiconductor Memory Industry

Amid escalating trade tensions with the West, the process of building a self-sufficient semiconductor ecosystem in China has strongly accelerated. Chinese players are starting to threaten the market’s equilibrium and could trigger profound changes in the memory business.

DRAM, NAND and Emerging Memory Technology Trends and Developments in 2019

Innovation in memory technology is constant. In this article, TechInsights’ Jeongdong Choe reviews the latest developments in DRAM, NAND, and emerging technology, and provide insight on the trends in this space.

AI needs memory

A new report by Forrester Consulting, commissioned by Micron, takes a look at how companies are implementing AI and the hardware they are using, with a special focus on memory and storage.

PCM + ReRAM = OUM as XPoint

The good people at TECHINSIGHTS have reverse-engineered an Intel “Optane” SSD to cross-section the XPoint cells within (http://www.eetimes.com/author.asp?section_id=36&doc_id=1331865&), so we have confirmation that the devices use chalcogenide glasses for both the switching layer and the selector diode. That the latter…

3D XPoint uses PCM Material in ReRAM Device

IM Flash pre-announced “3D XPoint”(TM) memory for release later this year, and lack of details has led to widespread confusion regarding what it is. EETimes has reported that, “Chalcogenide material and an Ovonyx switch are magic parts of this technology…

Cross-point ReRAM Integration Claimed by Intel/Micron

The Intel/Micron joint-venture now claims to have successfully integrated a Resistive-RAM (ReRAM) made with an unannounced material in a cross-point architecture, switching using an undisclosed mechanism. Pilot production wafers are supposed to be moving through the Lehi fab, and samples…

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