Scientists created a new AI algorithm for making measurement decisions; autonomous approach could revolutionize scientific experiments.
Enhancing Materials for Hi-Res Patterning to Advance Microelectronics
Scientists at Brookhaven Lab’s Center for Functional Nanomaterials created ‘hybrid’ organic-inorganic materials for transferring ultrasmall, high-aspect-ratio features into silicon for next-generation electronic devices.
EV Group and Schott Partner to Demonstrate Readiness of 300mm Nanoimprint Lithography for High-Volume Augmented/Mixed Reality Glass Manufacturing
Joint work to be carried out at EVG’s NILPhotonics Competence Center, an open innovation incubator for nanoimprint lithography (NIL) and the only accessible 300mm NIL development line worldwide.
KLA Joins Automotive Electronics Council
KLA Corporation announced today that the Automotive Electronics Council (AEC), the organization that sets qualification standards for electronic components in the automotive industry, has accepted the company as an associate member.
GLOBALFOUNDRIES Files Patent Infringement Lawsuits Against TSMC In the U.S. and Germany
Injunctions seek to prevent unlawful importation of infringing Taiwanese semiconductors.
RISC-V Is Experiencing a Period of Optimism and Growth with Global Revenue Expected to Reach $1.1 Billion by 2025
According to a new report from Tractica, the RISC-V movement is experiencing a dynamic period of growth, with many announcements regarding companies that are adopting RISC-V or introducing new tools for the architecture.
NUS Researchers Discover Unusual ‘Quasiparticle’ in Common 2D Material
The new quasiparticle, named ‘polaronic trion’, enables significant tunability in the optoelectronic properties of prominent 2D material, molybdenum disulphide.
Energy-Efficient Power Electronics — Gallium Oxide Power Transistors With Record Values
The Ferdinand-Braun-Institut (FBH) has now achieved a breakthrough with transistors based on gallium oxide (beta-Ga2O3). The newly developed beta-Ga2O3-MOSFETs (metal-oxide-semiconductor field-effect transistor) provide a high breakdown voltage combined with high current conductivity. With a breakdown voltage of 1.8 kilovolts and a record power figure of merit of 155 megawatts per square centimeter, they achieve unique performance figures close to the theoretical material limit of gallium oxide.
Research, Sponsored Activity Awards Top $1 Billion at Georgia Tech
Research, economic development and other sponsored activities at Georgia Tech passed a significant milestone during the fiscal year that concluded on June 30, recording more than a billion dollars in new grants, contracts and other awards.
Semiconductor Process Control Equipment Market: Evolving Opportunities with Major Industry Players Profiles
The global semiconductor process control equipment market size is poised to grow by USD 1.74 billion during 2019-2023, according to a new report by Technavio, progressing at a CAGR of almost 6% during the forecast period.
