Mobileye President and CEO Prof. Amnon Shashua and Israeli Prime Minister Benjamin Netanyahu laid the cornerstone for Mobileye’s new global development center in Jerusalem on Tuesday, Aug. 27, 2019.
Packaging
Toshiba Memory to Acquire the SSD Business of Taiwan’s LITE-ON Technology
Toshiba Memory Holdings Corporation, which will rebrand as Kioxia Holdings Corporation on October 1, 2019, announced today that it has signed a definitive agreement with LITE-ON Technology Corporation to acquire its Solid State Drive (SSD) business.
Intel Updates Advanced Packaging Technologies at Semicon West, the Latest in a Decade (or more) Evolution
In the last several years, Intel has had a series of announcements in the packaging arena, focused on the integration of multiple styles of chips in the same package to improve performance and broaden system capabilities.
Intel Optane DC Persistent Memory Improves Search, Reduces Costs in Baidu’s Feed Stream Services
Intel today announced Baidu is architecting the in-memory database of its Feed Stream services to harness the high-capacity and high-performance capabilities of Intel Optane DC persistent memory.
KLA Joins Automotive Electronics Council
KLA Corporation announced today that the Automotive Electronics Council (AEC), the organization that sets qualification standards for electronic components in the automotive industry, has accepted the company as an associate member.
GLOBALFOUNDRIES Files Patent Infringement Lawsuits Against TSMC In the U.S. and Germany
Injunctions seek to prevent unlawful importation of infringing Taiwanese semiconductors.
Energy-Efficient Power Electronics — Gallium Oxide Power Transistors With Record Values
The Ferdinand-Braun-Institut (FBH) has now achieved a breakthrough with transistors based on gallium oxide (beta-Ga2O3). The newly developed beta-Ga2O3-MOSFETs (metal-oxide-semiconductor field-effect transistor) provide a high breakdown voltage combined with high current conductivity. With a breakdown voltage of 1.8 kilovolts and a record power figure of merit of 155 megawatts per square centimeter, they achieve unique performance figures close to the theoretical material limit of gallium oxide.
North American Semiconductor Equipment Industry Posts July 2019 Billings
Total billings of North American equipment manufacturers for July were slightly up over June billings.
Molex Celebrates Opening of Optical R&D Facility in New Jersey
Center for Excellence in Wavelength Selective Switches for telecommunications and other high-performance networks.
2019 IEEE International Electron Devices Meeting to Highlight Innovative Devices for an Era of Connected Intelligence
The upcoming 65th annual IEEE International Electron Devices Meeting (IEDM), to be held December 7-11, 2019 at the Hilton San Francisco Union Square hotel, will once again feature the latest and most important research taking place in semiconductors and other electron devices, but with a sharper focus this year on devices intended to support diverse new applications.
