HieFo announced today the product launch of multiple new high-efficiency Continuous Wave DFB indium phosphide (InP) lasers, designed to address the ever-increasing demands of silicon photonics based optical transceivers.
Proprietary new design for uncooled intensity modulated direct detect applications
HieFo’s uncooled O-band CW laser family supports the CWDM4 wavelength plan over an operating temperature of -5 to 75°C, while maintaining 70mW minimum optical output power. These performance parameters are achieved using an Aluminum-free active quantum well design, which offers the optical transceiver industry a new standard in terms of proven field reliability and performance, for high operating temperature non-hermetic applications.
New efficiency milestones for Coherent Optical transmission
HieFo has achieved new performance levels with the latest innovations on the previously released HCL30 CW DFB laser chip. Using innovations from 12 recently filed patents, HieFo’s 1mm cavity length laser chip can produce above 200mW typical optical output power while achieving sub 300kHz spectral linewidth performance, all while achieving WPE of 30% or greater over a wide power range. HieFo offers custom O-band wavelength variants of this laser design for various coherent applications ranging from Datacenter to PON architecture.
“HieFo’s latest product advances address the stringent performance standards required by the industry’s leading silicon photonic designs,” stated Harry Moore, HieFo’s Chairman & Co-founder. Mr. Harry added, that, “HieFo continues to execute on our core mission, which is to develop and produce the most efficient and reliable InP based chips in the industry.”
