LPE and the Institute of Microelectronics (IME) at the Agency for Science, Technology and Research (A*STAR) have announced a research collaboration to develop high quality 200mm silicon carbide (SiC) and specialty epitaxy processes including enhanced growth rates with improved uniformity. This will be done through experimental activities supported by simulation studies.
Under the collaboration, the parties will leverage LPE’s knowledge in SiC chemical vapour deposition (CVD) reactor technology and SiC epitaxial growth, plus IME’s research capabilities and facilities, 200mm SiC pilot process integration line, and cutting-edge material characterisation equipment. The aim is to create 200mm epitaxy processes with enhanced growth rate and uniformities, and reduced killer defect densities.
The 200mm SiC pilot line is being established by A*STAR’s IME to validate 200mm manufacturing processes and tools on a pilot scale before transitioning to 200mm high-volume manufacturing. This collaboration will be part of IME’s plans for establishing a 200mm SiC innovation programme.
SiC epitaxy is one of the essential process steps for 200mm device processing of the upcoming 200mm SiC pilot line. The manufacturing industry is projected to move towards using a unique single-wafer chamber SiC epitaxy tool. LPE, which contributes their tools into the innovation programme, is geared towards quicker industrial adoption.