Magnachip Unveils New 8th-Generation 150V MXT MV MOSFETs

Magnachip Semiconductor Corporation announced today the launch of two new 150V MXT MV Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), using its 8^th-generation trench MOSFET technology.

Energy efficiency is crucial in high-power devices for reducing power consumption and ensuring stability. These newly released 8^th-generation 150V MXT MV MOSFETs (MDES15N056PTRH, MDU150N113PTVRH) were developed by leveraging Magnachip’s cutting-edge trench MOSFET technology. In particular, the R_DS(on) (the resistance value between the drain and the source of MOSFETs during on-state operation) of MDES15N056PTRH was reduced by 22% compared to the previous generation, thereby significantly enhancing energy efficiency in applications.

By improving the core cell and termination design, the Figure of Merit (FOM: R_DS(on)x Qg) of MDES15N056PTRH and MDU150N113PTVRH has been improved by 23% and 39%, respectively, compared to the previous version. Furthermore, the adoption of surface-mount type packages, such as D²PAK-7L (TO-263-7L) and PDFN56, reduces MOSFET sizes, enabling flexible design of various applications, such as motor controllers, battery management systems (BMSs), residential solar inverters and industrial power supplies.

“Following the introduction of five 8^th-generation 200V and 150V MOSFETs last year, we are pleased to now release two additional 150V MXT MV MOSFET product offerings in new packages,” said YJ Kim, CEO of Magnachip. “Magnachip will continue to expand its high-efficiency MXT MOSFET product portfolio, including new releases based on 180nm microfabrication technology in the near future.”