SEMI, the industry association serving the global semiconductor and electronics design and manufacturing supply chain, today applauded the United States Department of Commerce’s announcement of a Preliminary Memorandum of Terms for an award under the CHIPS and Science Act to support Micron Technology’s construction of two leading-edge Dynamic Random-Access Memory (DRAM) fabs in New York and a DRAM fab in Idaho. The award includes $6.14 billion in grants and an investment tax credit to advance Micron’s two-decade vision to invest approximately $100 billion in New York and $25 billion in Idaho, with the projects expected to create more than 11,000 manufacturing and facility jobs and 9,000 construction jobs.
“SEMI commends the U.S. Department of Commerce for this key step to strengthen the domestic semiconductor supply chain,” said Joe Stockunas, President of SEMI Americas. “Investing in the manufacturing of leading-edge memory chips is crucial to pair with the announcements supporting fabs for advanced processors, providing the building blocks for the proliferation of artificial intelligence and all high-tech applications that the global economy and people around the world depend on.”
“The proposed CHIPS and Science Act investment combined with Micron’s commitment to invest more than $50 billion dollars to develop two New York DRAM fabs and a third in Idaho over the next six years will help to fuel the expansion of the broader semiconductor ecosystem in each state,” Stockunas said. “SEMI encourages CHIPS Act investments in chip, equipment and materials R&D, as well as in advanced packaging, to support the buildout of the needed ecosystem.”
