Semiconductor Energy Laboratory Co., Ltd. (SEL) and Silvaco, Inc. today announced that they have jointly developed a SPICE model of oxide semiconductor FETs (field effect transistor) for use in a variety of applications, including the AI (artificial intelligence) field.
The crystalline oxide semiconductor CAAC-IGZOⓇ FET (c-axis aligned crystalline indium-gallium-zinc oxide FET) developed by SEL has extremely low off-leakage current, which enables ultra-low power consumption of semiconductors including memory and integrated circuits. The new semiconductor device is expected to be a key device in helping with reducing power consumption in the coming AI era. Until now a compact model for SPICE simulation, essential for circuit design, was not available and it has been difficult to reproduce detailed circuit characteristics through simulation.
The jointly developed compact model for CAAC-IGZO FET is a charge-based model that extends the material characteristics and operation mode of CAAC-IGZO FET and is based on BSIM-CMG, which is the industry standard model for multi-gate FinFET. The new compact model can faithfully reproduce the characteristics of oxide semiconductor FET.
Advantage of the compact model
- Modeling of operation in the oxide semiconductor’s accumulation mode
- Modeling of L/W scalability and temperature dependence
- Support of multi-gate structure with Fin shape
- Modeling of threshold voltage control by bottom gate
- Modeling of interface trapped charge and sub-gap localized charge
- Implemented in industry standard Verilog-A language