Intel Wins US Government Project to Develop Leading-Edge Foundry Ecosystem

Intel Foundry Services will lead the first phase of the U.S. Department of Defense’s RAMP-C program to establish a domestic commercial foundry infrastructure.

Intel 144-Tier Three-deck FG NAND with 161 Total Gates

A new 3D QLC NAND product has just arrived. TechInsights has quickly reviewed the Intel 1Tb QLC die removed from SSD 670p series which use 144L 3D NAND devices.

The Chip Shortage Wake-up Call

An extreme hypothetical scenario of complete disruption of Taiwanese foundries for one year could cause the global electronics supply chain to come to a halt.

IBM Unveils World’s First 2 nm Chip Technology

IBM announced a breakthrough in semiconductor design and process with the development of the world’s first chip announced with 2 nm nanosheet technology. The new design is projected to achieve 45 percent higher performance and 75 percent lower energy use than today’s 7 nm chips. It will likely not be in production until 2024.

Intel Launches ‘IDM 2.0’ Strategy, Including Two New U.S. Fabs and Foundry Services

Intel’s new CEO Pat Gelsinger announced significant manufacturing expansion plans, starting with an estimated $20 billion investment to build two new factories fabs in Arizona. He also announced Intel’s plans to become a major provider of foundry capacity in the U.S. and Europe to serve customers globally.

Amid COVID-19 and Trade War, China Continues to Advance Its Semiconductor Memory Industry

Amid escalating trade tensions with the West, the process of building a self-sufficient semiconductor ecosystem in China has strongly accelerated. Chinese players are starting to threaten the market’s equilibrium and could trigger profound changes in the memory business.

DRAM, NAND and Emerging Memory Technology Trends and Developments in 2019

Innovation in memory technology is constant. In this article, TechInsights’ Jeongdong Choe reviews the latest developments in DRAM, NAND, and emerging technology, and provide insight on the trends in this space.

Ruthenium Nanolayers are Ferromagnetic at RT

Researchers from Intel Corporation and the University of Minnesota and the University of Wisconsin have shown that strained atom-scale films of pure ruthenium (Ru) metal exhibit ferromagnetism at room temperature, openning up the possibility of using the material to build…

PCM + ReRAM = OUM as XPoint

The good people at TECHINSIGHTS have reverse-engineered an Intel “Optane” SSD to cross-section the XPoint cells within (http://www.eetimes.com/author.asp?section_id=36&doc_id=1331865&), so we have confirmation that the devices use chalcogenide glasses for both the switching layer and the selector diode. That the latter…

The ConFab Preview

The agenda is set for The ConFab, to be held May 14-17, 2017 in San Diego at the iconic Hotel del Coronado.

X